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Overview

Eoin O’Reilly

Principal Investigator

Eoin O’Reilly is originally from Dublin. Following a bachelor’s degree in Theoretical Physics in Trinity College, Dublin, he obtained a PhD in Theoretical Condensed Matter Physics at the University of Cambridge. He joined the University of Surrey in 1984, where he was head of the Department of Physics from 1997 to 2001. He moved to Tyndall National Institute in 2001, following the award of one of the first Principal Investigator grants by Science Foundation Ireland (SFI). Outside of IPIC, Eoin is Chief Scientist at Tyndall since 2014, and has held a joint appointment with the Department of Physics in University College Cork since 2007.

Biography

Eoin O’Reilly was born in Dublin, Ireland, received the BA (MOD) degree in Theoretical Physics from Trinity College, Dublin, and obtained a PhD in Theoretical Condensed Matter Physics at the University of Cambridge. He was appointed as a lecturer at the University of Surrey in 1984, where he was head of the Department of Physics from 1997 to 2001. He joined Tyndall National Institute in 2001, following the award of one of the first Principal Investigator grants by Science Foundation Ireland (SFI).

O’Reilly was appointed Chief Scientist at Tyndall in 2014, and has held a joint appointment with the Department of Physics in University College Cork since 2007. His research seeks to improve the fundamental understanding of photonic materials and devices, to enable the design of structures for new capabilities and applications. His list of over 300 publications includes 10 book chapters, 9 invited reviews, an undergraduate text book and general science articles. He is currently Principal Investigator on a Science Foundation Ireland project on “Nanoscale Physics and Engineering of Optoelectronic Materials and Devices”.

He coordinated two EU FP7 STREP projects: BIANCHO, on dilute bismide semiconductor lasers (2010-2014), and DEEPEN on multiscale simulation of electronic and photonic devices (2014-2016).  He is a regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year). He is a Fellow of the Institute of Physics (FInstP) and of the Institution of Engineering and Technology (FIET). O’Reilly was Chairman of the Board of the European Physical Society (EPS) Condensed Matter Division from 2006 to 2014. He is an Associate Editor of Semiconductor Science and Technology. He was a co-recipient in 2014 of the Rank Prize for Optoelectronics for his pioneering work on strained-layer semiconductor lasers.

Research

Focused mainly on the physics and applications of semiconductor devices and materials, my research interests target:
• Prediction and elucidation of the benefits of band structure engineering for optoelectronic material and device applications
• The introduction and development of widely useful techniques to analyse semiconductor electronic structure and its consequences
• Leading understanding of the electronic structure of crystalline and amorphous semiconductors
• Close collaboration with experimental physicists and device specialists, to determine the dominant gain and loss processes in optoelectronic materials and hence design and engineer a new generation of photonic devices with improved functionality.
Overall, I have developed and lead one of the few groups worldwide which have the aim and capability to start from first principles investigations of fundamental processes and carry through to investigations that guide and lead the development of photonic devices with enhanced capability and functionality.

Research Grants

ProjectFunding
Body
Start DateEnd DateAward
BIsmide And Nitride Components for High temperature Operation.European Union01-JUL-1031-AUG-14€531,425.00
Nanoscale Physics and Engineering of Optoelectronic materials and devices.Science Foundation of Ireland01-NOV-1031-DEC-15€1,350,624.00
High-resolution fingerprint sensing with vertical piezoelectric nanawire matrices PiezoMAT.European Union01-NOV-1331-OCT-16€414,477.00
From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanastructures.European Union01-JAN-1431-DEC-16€813,990.00
Publications

Books

YearPublication
(2002)Quantum Theory of Solids.
Eoin O’Reilly; (2002) Quantum Theory of Solids. London: Taylor and Francis. [Details]

Book Chapters

YearPublication
(2015)‘An overview of dilute nitrides theory and properties’
Eoin P. O’Reilly (2015) ‘An overview of dilute nitrides theory and properties’ In: Gianluca Ciatto (eds). Hydrogenated Dilute Nitride Semiconductors: Theory, Properties and Applications. Singapore: Pan Stanford.   [Details]
(2014)‘Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures’
Eoin P O’Reilly, Stefan Schulz, Oliver Marquardt and Aleksey D. Andreev (2014) ‘Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures’ In: M. Ehrhardt & T. Koprucki (eds). Multi-Band Effective Mass Approximations Advanced Mathematical Models and Numerical Techniques. Heidelberg: Springer International Publishing.   [DOI] [Details]
(2014)‘Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules’
Stefan Schulz and Eoin P. O’Reilly (2014) ‘Analysis of reduced built-in polarization fields and electronic structure of InGaN/GaN quantum dot molecules’ In: J. Wu & Z. M. Wang (eds). Quantum Dot Molecules. New York: Springer.   [DOI] [Details]
(2013)‘Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models’
C. A. Broderick, M. Usman and E. P. O’Reilly (2013) ‘Theory of the electronic structure of dilute bismide alloys: Tight-binding and k.p models’ In: H. Li and Z.M. Wang (eds). Bismuth Containing III-V Semiconductor Compounds. New York: Springer Series in Materials Science 186.   [Details]
(2012)‘Theory of Electronic Transport in Nanostructures’
E.P. O’Reilly and M. Seifikar (2012) ‘Theory of Electronic Transport in Nanostructures’ In: N. Balkan and X. Marie (eds). Semiconductor Modeling Techniques. New York: Springer Series in Materials Science.   [DOI] [Details]

Peer Reviewed Journals

YearPublication
(2014)‘Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian’
Marquardt, O,O’Reilly, EP,Schulz, S (2014) ‘Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian’. Journal of Physics-Condensed Matter, 26 [DOI] [Details]
(2014)‘Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells’
Usman, M,O’Reilly, EP (2014) ‘Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1-x/GaAs quantum wells’. Applied Physics Letters, 104 [DOI] [Details]
(2014)‘Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap’
Schulz S.; M. A. Caro; O’Reilly E. P. (2014) ‘Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap’. Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (3-4):762-765 [DOI] [Details]
(2014)‘Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys’
Schulz, S,Caro, MA,O’Reilly, EP (2014) ‘Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys’. Applied Physics Letters, 104 [DOI] [Details]
(2014)‘Luminescence properties of dilute bismide systems’
Breddermann, B,Baumner, A,Koch, SW,Ludewig, P,Stolz, W,Volz, K,Hader, J,Moloney, JV,Broderick, CA,O’Reilly, EP (2014) ‘Luminescence properties of dilute bismide systems’. Journal of Luminescence, 154 :95-98 [DOI] [Details]
(2014)‘Self-consistent Green’s function method for dilute nitride conduction band structure’
Seifikar, M,O’Reilly, EP,Fahy, S (2014) ‘Self-consistent Green’s function method for dilute nitride conduction band structure’. Journal of Physics-Condensed Matter, 26 [DOI] [Details]
(2014)‘Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects’
Uskov, AV,Protsenko, IE,Ikhsanov, RS,Babicheva, VE,Zhukovsky, SV,Lavrinenko, AV,O’Reilly, EP,Xu, HX (2014) ‘Internal photoemission from plasmonic nanoparticles: comparison between surface and volume photoelectric effects’. Nanoscale, 6 :4716-4727 [DOI] [Details]
(2014)‘Bistability of threshold in quantum dash-in-a-well lasers’
Harnedy, PE,Osborne, S,Joshi, S,Lelarge, F,O’Reilly, EP (2014) ‘Bistability of threshold in quantum dash-in-a-well lasers’. Iet Optoelectronics, 8 :94-98 [DOI] [Details]
(2014)‘Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration’
Uskov, AV,Protsenko, IE,Mortensen, NA,O’Reilly, EP (2014) ‘Broadening of Plasmonic Resonance Due to Electron Collisions with Nanoparticle Boundary: a Quantum Mechanical Consideration’. Plasmonics, 9 :185-192 [DOI] [Details]
(2013)‘Comparison of stress and total energy methods for calculation of elastic properties of semiconductors’
Caro, MA,Schulz, S,O’Reilly, EP (2013) ‘Comparison of stress and total energy methods for calculation of elastic properties of semiconductors’. Journal of Physics-Condensed Matter, 25 [DOI] [Details]
(2013)‘Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions’
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O’Reilly, EP (2013) ‘Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions’. Semiconductor Science and Technology, 28 [DOI] [Details]
(2013)‘Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x’
Usman, M,Broderick, CA,Batool, Z,Hild, K,Hosea, TJC,Sweeney, SJ,O’Reilly, EP (2013) ‘Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x’. Physical Review B, 87 [DOI] [Details]
(2013)‘Refractive index dynamics of InAs/GaAs quantum dots’
Crowley, MT,Houlihan, J,Piwonski, T,O’Driscoll, I,Williams, DP,O’Reilly, EP,Uskov, AV,Huyet, G (2013) ‘Refractive index dynamics of InAs/GaAs quantum dots’. Applied Physics Letters, 103 [DOI] [Details]
(2013)‘Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study’
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O’Reilly, EP (2013) ‘Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study’. Applied Physics Express, 6 [DOI] [Details]
(2013)‘Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors’
Broderick, CA,Usman, M,O’Reilly, EP (2013) ‘Derivation of 12-and 14-band k center dot p Hamiltonians for dilute bismide and bismide-nitride semiconductors’. Semiconductor Science and Technology, 28 [DOI] [Details]
(2013)’12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations’
Broderick, CA,Usman, M,O’Reilly, EP (2013) ’12-band k . p model for dilute bismide alloys of (In)GaAs derived from supercell calculations’. Physica Status Solidi B-Basic Solid State Physics, 250 :773-778 [DOI] [Details]
(2013)‘Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides’
Caro, MA,Schulz, S,O’Reilly, EP (2013) ‘Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides’. Physical Review B, 88 [DOI] [Details]
(2012)‘Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides’
Caro, MA,Schulz, S,O’Reilly, EP (2012) ‘Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides’. Physical Review B, 86 [DOI] [Details]
(2012)‘Band engineering in dilute nitride and bismide semiconductor lasers’
Broderick, CA,Usman, M,Sweeney, SJ,O’Reilly, EP (2012) ‘Band engineering in dilute nitride and bismide semiconductor lasers’. Semiconductor Science and Technology, 27 [DOI] [Details]
(2012)‘Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots’
Schulz, S,Caro, MA,O’Reilly, EP (2012) ‘Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots’. Applied Physics Letters, 101 [DOI] [Details]
(2012)‘Effect of alloy fluctuations on the local polarization in nitride nanostructures’
Caro, MA,Schulz, S,O’Reilly, EP (2012) ‘Effect of alloy fluctuations on the local polarization in nitride nanostructures’. Physica Status Solidi B-Basic Solid State Physics, 249 :526-530 [DOI] [Details]
(2012)‘Piezoelectric properties of zinc blende quantum dots’
Schulz, S,Caro, MA,O’Reilly, EP,Marquardt, O (2012) ‘Piezoelectric properties of zinc blende quantum dots’. Physica Status Solidi B-Basic Solid State Physics, 249 :521-525 [DOI] [Details]
(2012)‘Ground state switching in InGaN/GaN quantum dot molecules’
Schulz, S,O’Reilly, EP (2012) ‘Ground state switching in InGaN/GaN quantum dot molecules’. Physica Status Solidi B-Basic Solid State Physics, 249 :516-520 [DOI] [Details]
(2012)‘The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties’
Usman, M,Tasco, V,Todaro, MT,De Giorgi, M,O’Reilly, EP,Klimeck, G,Passaseo, A (2012) ‘The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties’. Nanotechnology, 23 [DOI] [Details]
(2012)‘Noise-Assisted Crystallization of Opal Films’
Khunsin, W,Amann, A,Kocher-Oberlehner, G,Romanov, SG,Pullteap, S,Seat, HC,O’Reilly, EP,Zentel, R,Torres, CMS (2012) ‘Noise-Assisted Crystallization of Opal Films’. Advanced Functional Materials, 22 :1812-1821 [DOI] [Details]
(2012)‘Fine-structure splitting in large-pitch pyramidal quantum dots’
Mereni, LO,Marquardt, O,Juska, G,Dimastrodonato, V,O’Reilly, EP,Pelucchi, E (2012) ‘Fine-structure splitting in large-pitch pyramidal quantum dots’. Physical Review B, 85 [DOI] [Details]
(2012)‘Built-in field control in nitride nanostructures operating in the UV’
Caro, M. A.; Schulz, S.; Healy, S. B.; O’Reilly, E. P. (2012) ‘Built-in field control in nitride nanostructures operating in the UV’. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4):838-841 [DOI] [Details]
(2012)‘A flexible, plane-wave based multiband k center dot p model’
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O’Reilly, EP,Neugebauer, J (2012) ‘A flexible, plane-wave based multiband k center dot p model’. Optical and Quantum Electronics, 44 :183-188 [DOI] [Details]
(2011)‘Built-in field reduction in InGaN/GaN quantum dot molecules’
Schulz, S,O’Reilly, EP (2011) ‘Built-in field reduction in InGaN/GaN quantum dot molecules’. Applied Physics Letters, 99 [DOI] [Details]
(2011)‘Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure’
Teubert, J,Klar, PJ,Lindsay, A,O’Reilly, EP; (2011) ‘Evidence of localized boron impurity states in (B,Ga,In)As in magnetotransport experiments under hydrostatic pressure’. Physical Review B, 83 [DOI] [Details]
(2011)‘Built-in field control in alloyed c-plane III-N quantum dots and wells’
Caro, MA,Schulz, S,Healy, SB,O’Reilly, EP; (2011) ‘Built-in field control in alloyed c-plane III-N quantum dots and wells’. Journal of Applied Physics, 109 [DOI] [Details]
(2011)‘Modelling and direct measurement of the density of states in GaAsN’
Vaughan, MP,Fahy, S,O’Reilly, EP,Ivanova, L,Eisele, H,Dahne, M; (2011) ‘Modelling and direct measurement of the density of states in GaAsN’. Physica Status Solidi B-Basic Solid State Physics, 248 :1167-1171 [DOI] [Details]
(2011)‘Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots’
Schulz, S,Caro, MA,O’Reilly, EP,Marquardt, O; (2011) ‘Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots’. Physical Review B: Condensed Matter, 84 [DOI] [Details]
(2011)‘Built-in fields in stacked InGaN/GaN quantum dots’
Schulz, S,O’Reilly, EP; (2011) ‘Built-in fields in stacked InGaN/GaN quantum dots’. Physica Status Solidi A-Applications and Materials Science, 208 :1551-1554 [DOI] [Details]
(2011)‘Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs’
Usman, M,Broderick, CA,Lindsay, A,O’Reilly, EP (2011) ‘Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs’. Physical Review B, 84 [DOI] [Details]
(2011)‘Theory of intermediate- and high-field mobility in dilute nitride alloys’
Seifikar, M,O’Reilly, EP,Fahy, S (2011) ‘Theory of intermediate- and high-field mobility in dilute nitride alloys’. Physical Review B, 84 [DOI] [Details]
(2011)‘Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As’
Sander, T,Teubert, J,Klar, PJ,Lindsay, A,O’Reilly, EP (2011) ‘Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As’. Physical Review B, 83 [DOI] [Details]
(2011)‘Analysis of band-anticrossing model in GaNAs near localised states’
Seifikar, M,O’Reilly, EP,Fahy, S; (2011) ‘Analysis of band-anticrossing model in GaNAs near localised states’. Physica Status Solidi B-Basic Solid State Physics, 248 :1176-1179 [DOI] [Details]
(2010)‘Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates’
Healy, S. B. and Young, R. J. and Mereni, L. O. and Dimastrodonato, V. and Pelucchi, E. and O’Reilly, E. P. (2010) ‘Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates’. Physica E-Low-Dimensional Systems & Nanostructures, 42 (10) [Details]
(2010)‘Theory of reduced built-in polarization field in nitride-based quantum dots’
Schulz, S,O’Reilly, EP; (2010) ‘Theory of reduced built-in polarization field in nitride-based quantum dots’. Physical Review B: Condensed Matter, 82 [DOI] [Details]
(2010)‘Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots’
Andrzejewski, J,Sek, G,O’Reilly, E,Fiore, A,Misiewicz, J; (2010) ‘Eight-band k . p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots’. Journal of Applied Physics, 107 [DOI] [Details]
(2010)‘Active Region Design for High-Speed 850-nm VCSELs’
Healy, SB,O’Reilly, EP,Gustavsson, JS,Westbergh, P,Haglund, A,Larsson, A,Joel, A; (2010) ‘Active Region Design for High-Speed 850-nm VCSELs’. IEEE Journal of Quantum Electronics, 46 :506-512 [DOI] [Details]
(2010)‘Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys’
Ivanova, L,Eisele, H,Vaughan, MP,Ebert, P,Lenz, A,Timm, R,Schumann, O,Geelhaar, L,Dahne, M,Fahy, S,Riechert, H,O’Reilly, EP; (2010) ‘Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys’. Physical Review B, 82 [DOI] [Details]
(2010)‘Electronic and optical properties of nonpolar a-plane GaN quantum wells’
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O’Reilly, EP; (2010) ‘Electronic and optical properties of nonpolar a-plane GaN quantum wells’. Physical Review B: Condensed Matter, 82 [DOI] [Details]
(2010)‘Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast’
Ridha, P,Li, LHH,Mexis, M,Smowton, PM,Andrzejewski, J,Sek, G,Misiewicz, J,O’Reilly, EP,Patriarche, G,Fiore, A; (2010) ‘Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast’. IEEE Journal of Quantum Electronics, 46 :197-204 [DOI] [Details]
(2009)‘Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots’
Gradkowski, K, Pavarelli, N, Ochalski, TJ, Williams, DP, Tatebayashi, J, Huyet, G, O’Reilly, EP, Huffaker, DL; (2009) ‘Complex Emission Dynamics of Type-Ii Gasb/Gaas Quantum Dots’. Applied Physics Letters, 95 (6) [DOI] [Details]
(2009)‘Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers’
Heck, SC,Osborne, S,Healy, SB,O’Reilly, EP,Lelarge, F,Poingt, F,Le Gouezigou, O,Accard, A; (2009) ‘Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers’. IEEE Journal of Quantum Electronics, 45 :1508-1516 [DOI] [Details]
(2009)‘Theory of GaN Quantum Dots for Optical Applications’
Williams, DP,Schulz, S,Andreev, AD,O’Reilly, EP; (2009) ‘Theory of GaN Quantum Dots for Optical Applications’. IEEE Journal of Selected Topics In Quantum Electronics, 15 :1092-1103 [DOI] [Details]
(2009)‘Control of reflectivity and stop bands in a Bragg stack with a four-layer period’
Saghir, SK,Amann, A,O’Reilly, EP; (2009) ‘Control of reflectivity and stop bands in a Bragg stack with a four-layer period’. Optics Communications, 282 :867-871 [DOI] [Details]
(2009)‘The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers’
Crowley, MT,Marko, IP,Masse, NF,Andreev, AD,Tomic, S,Sweeney, SJ,O’Reilly, EP,Adams, AR; (2009) ‘The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers’. IEEE Journal of Selected Topics In Quantum Electronics, 15 :799-807 [DOI] [Details]
(2009)‘Mechanism of Synchronization in Frequency Dividers’
Amann, A,Mortell, MP,O’Reilly, EP,Quinlan, M,Rachinskii, D; (2009) ‘Mechanism of Synchronization in Frequency Dividers’. IEEE Transactions On Circuits and Systems I-Regular Papers, 56 :190-199 [DOI] [Details]
(2009)‘Optical transition pathways in type-II Ga(As)Sb quantum dots’
Gradkowski, K,Ochalski, TJ,Williams, DP,Tatebayashi, J,Khoshakhlagh, A,Balakrishnan, G,O’Reilly, EP,Huyet, G,Dawson, LR,Huffaker, DL; (2009) ‘Optical transition pathways in type-II Ga(As)Sb quantum dots’. Journal of Luminescence, 129 :456-460 [DOI] [Details]
(2008)‘Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys’
Lindsay, A,O’Reilly, EP,Andreev, AD,Ashley, T; (2008) ‘Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys’. Physical Review B, 77 [DOI] [Details]
(2008)‘Gap Solitons In Spatiotemporal Photonic Crystals’
Biancalana, F, Amann, A, O’Reilly, EP; (2008) ‘Gap Solitons In Spatiotemporal Photonic Crystals’. Physical Review A, 77 (1) [DOI] [Details]
(2008)‘Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser’
Osborne, S,O’Brien, S,O’Reilly, EP,Huggard, PG,Ellison, BN; (2008) ‘Generation of CW 0.5 THz radiation by photomixing the output of a two-colour 1.49 mu m Fabry-Perot diode laser’. Electronic Letters, 44 :296-298 [DOI] [Details]
(2007)‘Dynamics of Light Propagation In Spatiotemporal Dielectric Structures’
Biancalana, F, Amann, A, Uskov, AV, O’Reilly, EP; (2007) ‘Dynamics of Light Propagation In Spatiotemporal Dielectric Structures’. Physical Review E, 75 (4) [DOI] [Details]
(2007)‘Two-colour Fabry-Perot laser with terahertz primary mode spacing’
Osborne, S,O’Brien, S,Buckley, K,Fehse, R,Patchell, J,Kelly, B,O’Gorman, J,O’Reilly, EP; (2007) ‘Two-colour Fabry-Perot laser with terahertz primary mode spacing’. Electronic Letters, 43 :224-225 [DOI] [Details]
(2006)‘Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design’
O’Brien, S, Osborne, S, Buckley, K, Fehse, R, Amann, A, O’Reilly, EP, Barry, LP, Anandarajah, P, Patchell, J, O’Gorman, J; (2006) ‘Inverse Scattering Approach to Multiwavelength Fabry-Perot Laser Design’. Physical Review A, 74 (6) [DOI] [Details]
(2006)‘Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach’
O’Brien, S., Amann, A., Rondinelli, J.M., Fehse, R., Osborne, S. O’Reilly, E.P.; (2006) ‘Spectral Manipulation in Fabry-Perot Lasers: Perturbative Inverse Scattering Approach’. Journal of the Optical Society of America B, 23 [DOI] [Details]
(2006)‘Alloy scattering of n-type carriers in GaNxAs1-x’
Fahy, S,Lindsay, A,Ouerdane, H,O’Reilly, EP; (2006) ‘Alloy scattering of n-type carriers in GaNxAs1-x’. Physical Review B, 74 [DOI] [Details]
(2005)‘Breakup of the conduction band structure of dilute GaAs1-yNy alloys’
Patane, A,Endicott, J,Ibanez, J,Brunkov, PN,Eaves, L,Healy, SB,Lindsay, A,O’Reilly, EP,Hopkinson, M; (2005) ‘Breakup of the conduction band structure of dilute GaAs1-yNy alloys’. Physical Review B, 71 [DOI] [Details]
(2005)‘On gain saturation in quantum dot semiconductor optical amplifiers’
Uskov, AV,O’Reilly, EP,Laemmlin, M,Ledentsov, NN,Bimberg, D; (2005) ‘On gain saturation in quantum dot semiconductor optical amplifiers’. Optics Communications, 248 :211-219 [DOI] [Details]
(2005)‘Biexciton and exciton dynamics in single InGaN quantum dots’
Rice, JH,Robinson, JW,Na, JH,Lee, KH,Taylor, RA,Williams, DP,O’Reilly, EP,Andreev, AD,Arakawa, Y,Yasin, S; (2005) ‘Biexciton and exciton dynamics in single InGaN quantum dots’. Nanotechnology, 16 :1477-1481 [DOI] [Details]
(2005)‘Theory of improved spectral purity in index patterned Fabry-Perot lasers’
O’Brien, S,O’Reilly, EP; (2005) ‘Theory of improved spectral purity in index patterned Fabry-Perot lasers’. Applied Physics Letters, 86 [DOI] [Details]
(2004)‘Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model’
O’Reilly, EP,Lindsay, A,Fahy, S; (2004) ‘Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model’. Journal of Physics-Condensed Matter, 16 :3257-3276 [DOI] [Details]
(2004)‘THz photocurrent through an independently contacted three-level heterostructure’
Vasko, FT,O’Reilly, EP; (2004) ‘THz photocurrent through an independently contacted three-level heterostructure’. Semiconductor Science and Technology, 19 :558-560 [DOI] [Details]
(2004)‘Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells’
Tomic, S,O’Reilly, EP,Klar, PJ,Gruning, H,Heimbrodt, W,Chen, WMM,Buyanova, IA; (2004) ‘Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1-x/GaAs quantum wells’. Physical Review B, 69 [DOI] [Details]
(2004)‘On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers’
Uskov, AV,O’Reilly, EP,Manning, RJ,Webb, RP,Cotter, D,Laemmlin, M,Ledentsov, NN,Bimberg, D; (2004) ‘On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers’. IEEE Photonics Technology Letters, 16 :1265-1267 [DOI] [Details]
(2004)‘Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states’
Uskov, AV,O’Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G; (2004) ‘Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states’. Applied Physics Letters, 84 :272-274 [DOI] [Details]
(2004)‘Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure’
Andreev, AD,O’Reilly, EP (2004) ‘Theoretical study of Auger recombination in a GaInNAs 1.3 mu m quantum well laser structure’. Applied Physics Letters, 84 :1826-1828 [DOI] [Details]
(2003)‘Resonant photon-assisted tunneling between independently contacted quantum wells’
Vasko, FT,O’Reilly, EP; (2003) ‘Resonant photon-assisted tunneling between independently contacted quantum wells’. Physical Review B, 67 [DOI] [Details]
(2003)‘Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers’
Tomic, S,O’Reilly, EP,Fehse, R,Sweeney, SJ,Adams, AR,Andreev, AD,Choulis, SA,Hosea, TJC,Riechert, H; (2003) ‘Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers’. IEEE Journal of Selected Topics In Quantum Electronics, 9 :1228-1238 [DOI] [Details]
(2003)‘Intrinsic limits on electron mobility in dilute nitride semiconductors’
Fahy, S,O’Reilly, EP; (2003) ‘Intrinsic limits on electron mobility in dilute nitride semiconductors’. Applied Physics Letters, 83 :3731-3733 [DOI] [Details]
(2003)‘Negative intersubband absorption in biased tunnel-coupled wells’
Vasko, FT,Korovin, AV,O’Reilly, EP; (2003) ‘Negative intersubband absorption in biased tunnel-coupled wells’. Physical Review B, 68 [DOI] [Details]
(2003)‘Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation’
McPeake, D,Vasko, FT,O’Reilly, EP; (2003) ‘Rabi oscillations of two-dimensional electrons under ultrafast intersubband excitation’. Physical Review B, 68 [DOI] [Details]
(2003)‘On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers’
Uskov, AV,Mork, J,Tromborg, B,Berg, TW,Magnusdottir, I,O’Reilly, EP; (2003) ‘On high-speed cross-gain modulation without pattern effects in quantum dot semiconductor optical amplifiers’. Optics Communications, 227 :363-369 [DOI] [Details]
(2003)‘Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers’
Tomic, S,O’Reilly, EP; (2003) ‘Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers’. IEEE Photonics Technology Letters, 15 :6-8 [DOI] [Details]
(2003)‘Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies’
Choulis, SA,Tomic, S,O’Reilly, EP,Hosea, TJC; (2003) ‘Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k center dot p studies’. Solid State Communications, 125 :155-159 [DOI] [Details]
(2002)‘A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers’
Fehse, R,Tomic, S,Adams, AR,Sweeney, SJ,O’Reilly, EP,Andreev, A,Riechert, H; (2002) ‘A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers’. IEEE Journal of Selected Topics In Quantum Electronics, 8 :801-810 [DOI] [Details]
(2002)‘Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys’
O’Reilly, EP,Lindsay, A,Tomic, S,Kamal-Saadi, M; (2002) ‘Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys’. Semiconductor Science and Technology, 17 :870-879 [DOI] [Details]
(2002)‘Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As)’
Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O’Reilly, EP,Hofmann, M,Hader, J,Moloney, JV; (2002) ‘Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As)’. Semiconductor Science and Technology, 17 :830-842 [DOI] [Details]
(1997)‘A simple method for calculating strain distributions in quantum dot structures’
Downes, JR and Faux, DA and O’Reilly, EP (1997) ‘A simple method for calculating strain distributions in quantum dot structures’. Journal of Applied Physics, 81 [Details]
(1994)‘Band-structure engineering in strained semiconductor lasers’
O’Reilly, Eoin P and Adams, Alfred R (1994) ‘Band-structure engineering in strained semiconductor lasers’. Quantum Electronics, IEEE Journal of, 30 (2):366-379 [Details]
(1994)‘Evaluation of various approximations used in the envelope-function method’
Meney, AT and Gonul, Besire and O’Reilly, EP (1994) ‘Evaluation of various approximations used in the envelope-function method’. Physical Review B, 50 (15) [Details]
(1989)‘Valence band engineering in strained-layer structures’
O’Reilly, EP (1989) ‘Valence band engineering in strained-layer structures’. Semiconductor Science and Technology, 4 [Details]
(1987)‘Electronic and atomic structure of amorphous carbon’
Robertson, J and O’Reilly, EP (1987) ‘Electronic and atomic structure of amorphous carbon’. Physical Review B, 35 (6) [Details]
(1983)‘Theory of defects in vitreous silicon dioxide’
O’Reilly, Eoin P and Robertson, John (1983) ‘Theory of defects in vitreous silicon dioxide’. Physical Review B, 27 (6) [Details]

Other

YearPublication
(2007)Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As).
Teubert, J, Klar, PJ, Heimbrodt, W, Gottschalch, V, Lindsay, A, O’Reilly, EP; (2007) Effect of Localized B and N States On The Magneto-Transport of (B,Ga,In)As and (Ga,In)(N,As). Other [DOI] [Details]
(2008)Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn.
Polimeni, A, Pettinari, G, Trotta, R, Masia, F, Felici, M, Capizzi, M, Lindsay, A, O’Reilly, EP, Niebling, T, Stolz, W, Klar, PJ, Martelli, F, Rubini, S; (2008) Photoluminescene Under Magnetic Field and Hydrostatic Pressure For Probing The Electronic Properties of Gaasn. Other [DOI] [Details]
(2008)Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys.
Harris, C, Lindsay, A, O’Reilly, EP; (2008) Evolution of N Defect States and Optical Transitions In Ordered and Disordered Gap1-Xnx Alloys. Other [DOI] [Details]
(2009)Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers.
Crowley, MT, Andreev, AD, Piwonski, T, Houlihan, J, O’Reilly, EP, Huyet, G; (2009) Interconnection Between Ground State and Excited State Gain In Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers. Other [DOI] [Details]

Professional

Honours and Awards

YearTitleAwarding Body
2014Rank Prize for OptoelectronicsRank Prize Fund
2010Member Royal Irish AcademyRoyal Irish Academy
2005Fellow of Institution of Engineering TechnologyIET
1997Fellow of Institute of PhysicsIoP
1994Humboldt Fellowship, Fraunhofer Inst. Solid State Physics, FreiburgHumboldt Foundation
1978Fitzgerald Medal and Gold Medal for PhysicsTrinity College Dublin

Patents

Patent NumberTitleInventorGranted
?Index patterned semiconductor Fabry-Perot laserEoin O’Reilly20-MAY-10

Committees

CommitteeFunctionFrom / To
RIA Physical, Chemical & Mathematical Sciences CommitteeMember2014 /
Board of European Physics Society Condensed Matter DivisionChair2004 / 2014
Steering Committee of the National Centre for III-V Technologies, University of Sheffield, UKMember2006 / 2010
IEEE LEOS Semiconductor Laser Technical CommitteeMember2002 / 2004
IoP Condensed Matter and Materials Physics Division CommitteeMember2000 / 2006
IoP Semiconductor Physics and Quantum Electronics (1998) committeesMember1995 / 1998
Photonics Ireland 2015, CorkCo-chair2015 /
5th International Workshop on Bismuth-containing Semiconductors, CorkWorkshop Chair/ 2014
Symposium on “Multi-scale Multi-Physics Modelling for Nanomaterials and Systems by Design”, Materials Science and Engineering, DarmstadtSymposium Main Organiser/ 2014
24th General Conference of EPS Condensed Matter Division, EdinburghCo-chair/ 2012
ACAM Workshop, Dublin on “Empirical Methods in Semiconductor Nanostructure Design and Modelling”Workshop Main Organiser/ 2010
CECAM Workshop, Manchester on “Empirical Methods in Semiconductor Nanostructure Design and Modelling”Co-organizer/ 2010
Photonics Ireland 2009, CorkProgramme Chair/ 2009
22nd General Conference of EPS CMD, RomeCo-chair/ 2008
Photonics Ireland 2007Programme Committee/ 2007
21st General Conference of EPS CMD, DresdenCo-chair/ 2006
SFI-sponsored conference: “Emerging Technologies in Optical Sciences”, University College CorkOrganizing Committee/ 2004
EMRS Spring meeting symposium on “Physics and applications of dilute nitride alloys”, StrasbourgSymposium Chair/ 2004
NMRC ICT Technology Forum on “Photonics: Enabling Future Technologies”, CorkForum Organiser/ 2004
10th Int. Conf. On High Pressure Semiconductor Physics, GuildfordProgramme Chair/ 2002
19th General Conference of the EPS Condensed Matter Division and CMMP2002, BrightonConference Chair/ 2002
EPSRCCollege member2006 /
EPSRCCollege member1999 / 2002
Forbairt Basic research grants, IrelandExternal Assessor1997 / 1998
Trinity College DublinPhysics undergraduate External Examiner2006 / 2009
University of PortsmouthPhysics undergraduate External Examiner1998 / 2002

Employment

EmployerPositionFrom / To
University of SurreyHead, Department of Physics01-AUG-97 / 31-AUG-01
Dept. of Physics University of SurreyProfessor Senior Lecturer Lecturer01-SEP-84 / 31-JUL-97
National Institute for Higher Education, Dublin (now DCU)Assistant Lecturer01-SEP-82 / 31-AUG-84
University of Illinois, Urbana-ChampaignResearch Associate01-OCT-81 / 31-AUG-82

Education

YearInstitutionQualificationSubject
1978Trinity College DublinBATheoretical Physics
1981University of CambridgePHDPhysics

Outreach Activities

Description
Considerable effort has been devoted to raising wider awareness of work at Tyndall. This includes development of the Tyndall Outreach programme; introduction and organisation of the Tyndall undergraduate summer bursary programme since 2003 (~10 students per year), now funded as an SFI UREKA site (2006-08); technical organisation of Tyndall ICT Technology Forum on “Photonics: Enabling Future Technologies” (2004); public lectures (including British Association, Dublin 2005) and several press articles.

Journal Activities

JournalRoleTo / From
Semiconductor Science And TechnologyGuest Editor01-JUN-14 – 31-MAY-15
Semiconductor Science And TechnologyMember of Editorial Board01-JAN-11 –
Ieee J Sel Top QuantGuest Editor01-JAN-11 – 30-NOV-11
Iee Proceedings OptoelectronicsGuest Editor01-MAY-04 – 30-NOV-04

Other Activities

Description
Regular referee and adjudicator for a wide range of journals and funding agencies (~30-40 requests per year), including IET, IEEE, APS, AIP, IoP, EPSRC, ERC, NSF, ESF, DFG, Academy of Finland, FWO and FCT.

Teaching

Teaching Interests

Recent Postgraduates

Graduation YearStudent NameInstitutionDegree TypeThesis Title
2013Miguel CaroNUI (UCC)PHDTheory of elasticity and electric polarization effects in the group-III nitrides

Current Postgraduate Students

StudentDegree Type
Villiers RoryDoctoral Degree
Tanner DanielDoctoral Degree
Bogusevschi SilviuDoctoral Degree
Harnedy Patrick EdwardDoctoral Degree
Broderick Christopher AnthonyDoctoral Degree

Modules Taught

Term (ID))TitleLinkSubject
2015Advanced Condensed Matter PhysicsPY4104Advanced Condensed Matter Physics
2015Introduction to Condensed Matter PhysicsPY3105Introduction to Condensed Matter Physics
2015Quantum MechanicsPY3102Quantum Mechanics