Sathish Chander joined as Optoelectronic Researcher at the CAPPA center, MTU, Cork to involve in the part of the US-Ireland R&D Partnership project titled “Strained Engineered Germanium Quantum-Well Laser on GaAs and Si for Nanoscale Photonics”. He is specifically involving in the optical characterization of III-V and Ge materials using pump-probe or time-resolved photoluminescence and further working in the design and fabrication of III-V / Ge Quantum Well Lasers and their studies of I-V, L-I characteristics, efficiency, threshold current, RF bandwidth and tuneability of optical spectra for optical coherence tomography and bio-medical applications.
He received his Ph.D in Science and Technology of Innovative Materials from University of Parma, Italy in 2014. During his Ph.D he was awarded ‘Marie Curie Fellowship’ in the European project FP7 MARIE CURIE ITN ”Nanowiring” at IMEM-CNR, Parma, Italy. He was also involved in the research theme of “MOVPE growth and optical studies of II-VI and IV-IV semiconductor materials and nanostructures”. Subsequently, he worked as Postdoctoral Fellow in College of optoelectronics engineering, Shenzhen University, Shenzhen, China in the field of “nanofabrication of nano-photonic devices (Photodetectors, Modulators and Saturable Absorbers) and ultrafast studies of 2D materials”. Further, he engaged as Dynamic Integrated researcher in Centre for Advanced Materials, Aaivalayam – Dynamic Integrated Research Academy and Corporations (ADIRAC), Coimbatore, India worked in the research theme of “Functional semiconductor nanostructured materials for Energy and Photonic Integrated systems”. Previously, prior to do Ph.D, he was engaged as a project research associate at IIT, Kanpur, India.
