Monolithic and Heterogeneous Integration
‘Printed photonics on anything’
The Monolithic and Heterogeneous Integration theme will develop a range of essential semiconductor material, device and integration technologies, with a key objective being to find new ways to combine photonics and electronics together on multiple substrates (silicon, ceramic, polymer etc.) with unprecedented simplicity and cost-effectiveness, using transfer printing. We refer to this colloquially as "printed photonics on anything".
Tyndall Scientists Print Tiny GaAs PV Cells On Silicon
Researchers at the Tyndall National Institute in Cork have demonstrated highly efficient power conversion on silicon substrates under laser light at 808-nm using GaAs based photovoltaic (PV) power convertersAn open circuit voltage of 1.235 V and conversion efficiency of 49 percent was obtained under an equivalent power density of 700 suns.
Full article here.
Integrated dual optical frequency comb source
Justin K. Alexander, Ludovic Caro, Mohamad Dernaika, Shane P. Duggan, Hua Yang, Satheesh Chandran, Eamonn P. Martin, Albert A. Ruth, Prince M. Anandarajah, and Frank H. Peters
The first demonstration of a dual optical frequency comb source with all light sources monolithically integrated in a photonic integrated circuit (PIC) was shown.
Early stages of InP nanostructure formation on AlInAs
Agnieszka M. Gocalinska, Enrica E. Mura, Marina Manganaro, Gediminas Juska, Valeria Dimastrodonato, Kevin Thomas, Andrew Zangwill, Dimitri D. Vvedensky, and Emanuele Pelucchi
Phys. Rev. B 101, 165310 – Published 27 April 2020
We present a systematic study of the morphology of InP films grown on macroscopically lattice-matched AlxIn1−xAs during low-pressure MOVPE.
Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates
Agnieszka Gocalinska1, Andrea Pescaglini1, Eleonora Secco1, Enrica E Mura1, Kevin Thomas1, Anya Curran1, Farzan Gity1, Roger Nagle1, Michael Schmidt1, Paweł P Michałowski2, Paul K Hurley1, Ian Povey1 and Emanuele Pelucchi1Hide full author list
We report on the growth and electronic properties of polycrystalline III–V semiconductors.
Routes to Ideal Telecom Lasers?
Chris Broderick from Eoin O’Reily’s team had a general article published in the IEEE Photonics Society newsletter, February 2020.
“Routes to Ideal Telecom Lasers?” It features on the cover with a picture of lasers made by James O’Callaghan.
Contributions were made by Brian Corbett and by Emanuele Pelucchi.
Talks for IPIC 2020 Summer Bursary
IPIC 2020 summer bursary has started, several researchers and students have provided technical talks to the students. Check available videos here:
“Micro Transfer Printing Introduction” by 1st year Ph.D. candidate, Hemalatha Muthuganesan, https://www.youtube.com/watch?v=Qr0N5DjYH78&t=5s
“Photonic Integration Methods Introduction” by 2nd year Ph.D. candidate, Megan O’Brien, https://www.youtube.com/watch?v=0vj7tB_ICoA
“Single-Mode Laser Characterisation” by a 1st year Ph.D. candidate, John McCarthy, https://youtu.be/ANk-tG1MnWM
“Monolithic and Heterogeneous Integration Theme Introduction” by the theme director, Brian Corbett, https://youtu.be/DZ9lOMCURz4
Welcome to subscribe to our Youtube Channel for more talks.https://www.youtube.com/channel/UC_sQnKlnapPslC2LEXxlGUQ
The European Conference on Integrated Optics 2020 was held virtually this year. We have several researchers, students, and staff attended this meeting.
Please find one from one research assistant, Zhengkai Jia.
Name: Zhengkai Jia, Hua Yang, Hui Wang, Xing Dai, Alison H. Perrott, Frank H. Peters
Title: Quantum Well Intermixing of InP-Based AlInGaAs Quantum Wells Using IFVD Technique and the Mask Boundary Effect
Abstract: This paper presents research on quantum well intermixing (QWI) using impurity-free vacancy-disordering (IFVD) while studying the effect of the QWI mask boundary. Using a SiNx film deposited by PECVD as a QWI mask and annealing under 725˚C for 2 minutes, a 120nm wavelength blue shift of a FP laser is achieved using an InP-based AlInGaAs quantum well laser material. It is found that a 7.5µm margin is needed between the QWI mask edges and the non-QWI area during the QWI process. This will be a valuable reference for design and fabrication of photonic integration circuits (PICs) using QWI.
Activies during COVID-19 lock-down
Dr. Agnieszka Gocalinska did 2 online outreach meetings, on 29th and 30th of April, with primary school children (“Playing with the rainbow” adapted workshop for the younger group (6-10 year olds), and career talk with some added demos for older kids (10+).