The researchers used slanted facets to direct amplified spontaneous emission (ASE) through the GaN substrate with very low feedback, avoiding laser action.
More information: http://www.semiconductor-today.com/news_items/2019/nov/tyndall-151119.shtml
The researchers used slanted facets to direct amplified spontaneous emission (ASE) through the GaN substrate with very low feedback, avoiding laser action.
More information: http://www.semiconductor-today.com/news_items/2019/nov/tyndall-151119.shtml